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Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great…
Electron bands in the untwisted bilayer graphene flatten out in a transverse electric field, offering a promising platform for correlated electron physics. We predict that the spin/valley isospin magnetism, resembling that seen in moir\'{e}…
We theoretically study transport signatures associated with a spontaneous 2-valley to 1-valley quantum phase transition in a two-dimensional electron gas (2DEG) tuned by decreasing the 2D carrier density, as claimed in a recent experiment…
Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime ($L>\xi$). We measure the device's differential resistance as a function of bias current…
We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
Kelvin probe force microscopy (KPFM) has been employed to probe charge carriers in a graphene/hexagonal boron nitride (hBN) heterostructure [Nano Lett, 21, 5013 (2021)]. We propose an approach for operating valley filtering based on the…
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in…
If a device like a graphene nanoribbon (GNR) has all its four corners attached to electric current leads, the device becomes a quantum junction through which two electrical circuits can interact. We study such system theoretically for…
Using the tight-binding model, we investigate the valley current of the `low-bi-up' and `low-bi-low' graphene junction, where `low' and `up' are respectively the lower and upper graphene layers extended from the central AB stacking bilayer…
The low-temperature phase diagram of multilayer graphene heterostructures is largely defined by the exchange-driven instability that lifts the four-fold isospin degeneracy. Such instability gives rise to the quarter- and half-metal phases,…
We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…
The layer-resolved quantum transport response of a twisted bilayer graphene device is investigated by driving a current through the bottom layer and measuring the induced voltage in the top layer. Devices with four- and eight-layer…
In moir\'e graphene systems, electronic interactions lift spin and valley degeneracies, leading to symmetry-broken ground states. In helical trilayer graphene (HTG), we uncover a distinct interaction-driven mechanism in which the roles of…
We explore a network of electronic quantum valley Hall (QVH) states in the moir\'e crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-P\'erot and Aharanov-Bohm oscillations which are robust in…
The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…
Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and…