Related papers: A Novel Ferroelectric Rashba Semiconductor
Spin splitting and the resulting spin texture are central to emerging spintronic applications. In non-centrosymmetric non-magnetic materials containing heavy elements, spin textures are typically governed by low-order, momentum-dependent…
The coherent transport of charge and spin is one key requirement of future devices for quantum computing and communication. Scattering at defects or impurities may seriously reduce the coherence of quantum-mechanical states, thereby…
Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…
Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric…
Nowdays, multiferroic materials with magnetoelectric coupling have many real-world applications in the fields of novel memory devices. It is challenging is to create multiferroic materials with strongly coupled ferroelectric and…
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using…
For static crystals it is well known that electronic states are doubly degenerate in their spin degree of freedom in the presence of time reversal and inversion symmetries. This degeneracy can only be lifted by either (i) breaking time…
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…
Two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) demonstates great potential for developing flexible and wearable spintronic devices, by serving as spin sources via the bulk Rashba effect (BRE). However, the practical…
Spin semimetals are a recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel while a semimetallic feature in the other and thus allows for tunable spin transport. Here, we present experimental…
The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin…
The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…
The InSb/CdTe heterojunction structure, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin-orbit coupling effect and nonreciprocal transport, which makes its…
Using the Bogoliubov de-Gennes formalism, we investigate the charge and spin-dependent thermoelectric effects in superconductor graphene junctions. Results demonstrate that despite normal-superconductor junctions, there is a…
We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…
All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…
Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to…
We study the spatial distribution of spin torque induced by a strong Rashba spin-orbit coupling (RSOC) in a ferromagnetic (FM) metal layer, using the Keldysh non-equilibrium Green's function method. In the presence of the s-d interaction…
Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum…