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Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to…

Quantum Physics · Physics 2023-02-22 Yihuang Xiong , Milena Mathew , Sinéad M. Griffin , Alp Sipahigil , Geoffroy Hautier

Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of…

Mesoscale and Nanoscale Physics · Physics 2014-07-09 S. Yuan , R. Roldán , M. I. Katsnelson , F. Guinea

Solid-state point defects are attracting increasing attention in the field of quantum information science, because their localized states can act as a spin-photon interface in devices that store and transfer quantum information, which have…

The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but…

Materials Science · Physics 2017-11-22 Sergio M. M. Coelho , Juan F. R. Archilla , F. Danie Auret , Jackie M. Nel

The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The…

Instrumentation and Detectors · Physics 2009-11-11 I. Lazanu , S. Lazanu

Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore we study the impact of point and line defects on the electronic structure and optical properties of MoS2…

Mesoscale and Nanoscale Physics · Physics 2017-04-26 Jens Kunstmann , Tsegabirhan B. Wendumu , Gotthard Seifert

Illumination has been long known to affect semiconductor defect properties during either growth or operating process. Current theories of studying the illumination effects on defects usually have the assumption of unaffected formation…

Computational Physics · Physics 2023-05-05 Guo-Jun Zhu , Yi-Bin Fang , Zhi-Guo Tao , Ji-Hui Yang , Xin-Gao Gong

Exact solution of the linearized equations for steady-state transport in semiconductors yields two modes that vary exponentially in space, one involving screening (without entropy production) and one involving diffusion and recombination…

Condensed Matter · Physics 2023-02-07 Maja Krčmar , Wayne M. Saslow

Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the…

Materials Science · Physics 2026-05-27 Seong Yun Hong , Liang Z. Tan , Ki Hoon Lee , Youngho Kang , Yeonghun Lee

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…

Materials Science · Physics 2022-05-09 Tamanna Joshi , Pratibha Dev

Defects are generally regarded to have negative impacts on carrier recombination, charge-transport and ion migration in materials, which thus lower the efficiency, speed and stability of optoelectronic devices. Meanwhile, lots of efforts…

Applied Physics · Physics 2024-02-05 Yu-Hao Deng

Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…

Mesoscale and Nanoscale Physics · Physics 2018-09-05 G. Wolfowicz , S. J. Whiteley , D. D. Awschalom

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual…

Conventional semiconductors typically have bonding states near the valence band maximum (VBM) and antibonding states near the conduction band minimum (CBM). Semiconductors with the opposite electronic configuration, namely an antibonding…

Materials Science · Physics 2025-03-21 Zeyu Xiang , Fanghao Zhang , Bolin Liao

We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the…

Materials Science · Physics 2024-08-16 Tomohito Otobe , Eiyu Gushiken

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the…

Mesoscale and Nanoscale Physics · Physics 2016-09-19 Vladimir A. Sablikov , Aleksei A. Sukhanov

Defect energy formation, lattice distortions and electronic structure of cubic In2O3 with Sn, Ga and O impurities were theoretically investigated using density functional theory. Different types of point defects, consisting of 1 to 4 atoms…

Mesoscale and Nanoscale Physics · Physics 2020-02-06 Alexandr I. Cocemasov , Vladimir I. Brinzari , Denis L. Nika

Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and…

Identifying scalable materials systems that exhibit quantum behavior is a central challenge in quantum information science. Point defects in certain wide-bandgap semiconductors are promising in this regard due to the maturity of…

Quantum Physics · Physics 2026-03-17 Michael Kuban

Due to their technological importance, point defects in silicon are among the best studied physical systems. The experimental examination of point defects buried in bulk is difficult and evidence for the various defects usually indirect.…

Materials Science · Physics 2009-11-07 Stefan Goedecker , Luc Billard , Thierry Deutsch
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