Related papers: Fractal-like star-mesh transformations using graph…
A previous mathematical approach adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices (QHARS) has been further explored with…
A recent mathematical framework for optimizing resistor networks to achieve values in the M{\Omega} through G{\Omega} levels was employed for two specific cases. Objectives here include proof of concept and identification of possible…
Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible…
We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…
We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling…
This work introduces a pseudofractal analysis for optimizing high-resistance graphene-based quantized Hall array resistance standards (QHARS). The development of resistance standard device designs through star-mesh transformations is…
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts.…
This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Refinements are made on a recently developed mathematical…
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…
Precision measurements of the quantum Hall resistance with alternating current (ac) in the kHz range were performed on epitaxial graphene in order to assess its suitability as a quantum standard of impedance. The quantum Hall plateaus…
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam…
The quantum Hall effect (QHE) is a cornerstone in the new International System of Units (SI), wherein the base units are derived from seven fundamental constants such as Planck's constant h and elementary charge e. Graphene has…
Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science…
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex…
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto…
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals,…
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…