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We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we…
Point defects in semiconductors offer a promising platform for advancing quantum technologies due to their localized energy states and controllable spin properties. Prior research has focused on a limited set of defects within materials…
Diamonds containing color centers have recently gathered significant attention for photonic quantum technologies, including quantum sensing, photonic quantum computers, and quantum networks. Among the various color centers, tin-vacancy…
The charge state of a quantum point defect in a solid state host strongly determines its optical and spin characteristics. Consequently, techniques for controlling the charge state are required to realize technologies such as quantum…
Nuclear spins near group-IV defects in diamond are promising candidates for quantum memories in quantum network applications. Here, we demonstrate high-fidelity control of a single $^{13}$C nuclear spin coupled to a tin-vacancy (SnV) center…
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…
Nuclear spins in solids exhibit long coherence times due to the small nuclear gyromagnetic ratio. This weak environmental coupling comes at the expense of slow quantum gate operations, which should be as fast as possible for many…
We present a density functional theory analysis of nitrogen-vacancy (NV) centers in diamond which are located in the vicinity of extended defects, namely intrinsic stacking faults (ISF), extrinsic stacking faults (ESF), and coherent twin…
Point defects in wide-bandgap semiconductors are emerging as versatile resources for nanoscale sensing and quantum information science but our understanding of the photo-ionization dynamics is presently incomplete. Here we use two-color…
In diamond, nitrogen defects like the substitutional nitrogen defect (Ns) or the nitrogen-vacancy-hydrogen complex (NVH) outnumber the nitrogen vacancy (NV) defect by at least one order of magnitude creating a dense spin bath. While neutral…
We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the…
We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $\Delta\lambda/\Delta T=…
Silicon-vacancy (SiV) color centers in diamond have great potential for optical sensing and bio-imaging applications. However, the fabrication of large-scale high-density SiV centers in diamond remains difficult. Here, we report a promising…
Silicon-vacancy (SiV$^-$) centers in diamond are promising candidates as sources of single-photons in quantum networks due to their minimal phonon coupling and narrow optical linewidths. Correlating SiV$^-$ emission with the defect's…
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions,…
Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond…
Quantum networks offer a way to overcome the size and complexity limitations of single quantum devices by linking multiple nodes into a scalable architecture. Group-IV color centers in diamond, paired with long-lived nuclear spins, have…
Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which…
Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal…
Shallow nitrogen-vacancy (NV) centers in diamond are promising for nano-magnetometry for they can be placed proximate to targets. To study the intrinsic magnetic properties, zero-field magnetometry is desirable. However, for shallow NV…