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Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…

The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…

The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…

Conventional racetrack memories move information by pushing magnetic domain walls or other spin textures with spin-polarized currents, but the accompanying Joule heating inflates their energy budget and can hamper scaling. Here we present a…

Scalable, low-dissipation memory operating below 4 K is a critical requirement for superconducting and quantum computing systems. Existing cryogenic memory technologies rely on CMOS derivatives or hybrid architectures that incur leakage,…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog…

Reliable organic ferroelectrics for memory applications require extreme endurance under repeated electrical switching. Here we demonstrate exceptional fatigue resistance in highly crystalline 2-methylbenzimidazole (MBI) films grown by…

Two-dimensional multiferroics promise low-power, multifunctional devices, yet the intrinsic coexistence and mutual control of three coupled ferroic orders in a single layer remains elusive. Here, we identify pentagonal monolayer FeO$_2$ as…

Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…

Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin…

Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott…

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…

We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We…

The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to…

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…

Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…