Related papers: Lateral Solid Phase Epitaxy of Yttrium Iron Garnet
Large-scale atomically thin metals can be stabilized through confinement epitaxy at graphene / SiC interface, which exhibit a gradient bonding type and are air stable, providing a compelling platform for quantum and optoelectronic…
The possibility of nonlinear pulses generation in Yttrium Iron Garnet thin films for arbitrary direction between waveguide and applied static in-plane magnetic field is considered. Up to now only the cases of in-plane magnetic fields either…
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…
The tetragonal states produced by isotropic pseudomorphic epitaxial strain in the (001) plane on a tetragonal phase of a crystal are calculated for V, Ti, Rb, Li, K, Sr from first-principles electronic theory. It is shown that each metal…
La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ) buffered silicon-on-insulator (SOI) substrate by the pulsed laser deposition technique. While full cube-on-cube epitaxy was achieved for the YSZ layer, the top…
Strontium titanate (SrTiO$_{3}$, STO) stands out as a promising material for various electronic applications thanks to its exceptional dielectric properties. Molecular beam epitaxy is one of the few techniques which allows epitaxial growth…
Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low…
In this study, we investigate the relationships between film growth conditions, crystalline microstructure, and magnetic properties of epitaxial Yttrium Iron Garnet (Y$_3$Fe$_5$O$_{12}$, YIG) thin films, deposited on Gallium Gadolinium…
We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the…
Magnetron sputtering has also been used to deposit thin films of some materials and it has significant technological importance. A modeling on deposition of epitaxial thin films of Yttrium Stabilized Zirconia (YSZ) was done the diffusion of…
We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and…
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent…
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the…
The direct growth of semiconductors over metals by molecular beam epitaxy is a difficult task due to the large differences in crystallization energy between these types of materials. This aspect is problematic in the context of spintronics,…
The high cost of single crystal III-V substrates limits the use of GaAs and related sphalerite III-V materials in many applications, especially photovoltaics. Separating epitaxially-grown layers from a growth substrate can reduce costs,…
Topological quantum materials that show strongly correlated electrons as well as topological order, for which spin-orbit coupling is a key ingredient, exhibit novel states of matter. One such example is the family of pyrochlore iridates,…
Control over crystallographic orientation in metal-organic framework (MOF) thin films is crucial for exploiting their anisotropic properties in sensing, catalysis, and separation. Achieving reproducible, highly oriented films remains…
We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG) and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12 with…
For longitudinal spin Seebeck effect (LSSE) devices, a multilayer structure comprising ferromagnetic and nonmagnetic layers is expected to improve their thermoelectric power. In this study, we developed the fabrication method for…
We investigate lamellar three-phase patterns that form during the directional solidification of ternary eutectic alloys in thin samples. A distinctive feature of this system is that many different geometric arrangements of the three phases…