Related papers: Strain Effects on Auger-Meitner Recombination in S…
We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton…
The effect of biaxial strain on the superconducting properties of MgB2 thin films was studied by first-principles calculations. The stability analyses by phonon dispersions show that biaxial strain as much as 7% can be applied onto MgB2…
We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the…
The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons,…
Fast oxygen transport materials are necessary for a range of technologies, including efficient and cost-effective solid oxide fuel cells, gas separation membranes, oxygen sensors, chemical looping devices, and memristors. Strain is often…
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…
The plasma dispersion effect and free-carrier absorption are widely used for changing refractive index and absorption coefficient in Si-based optical modulators. However, these free-carrier effects in Si are not large enough for making the…
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that…
Strain in a material induces shifts in vibrational frequencies, which is a probe of the nature of the vibrations and interatomic potentials, and can be used to map local stress/strain distributions via Raman microscopy. This method is…
Two-dimensional materials are extraordinarily sensitive to external stimuli, making them ideal for studying fundamental properties and for engineering devices with new functionalities. One such stimulus, strain, affects the magnetic…
The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here,…
We report a numerical study of the effect of interface alloying and band-alignment on the Auger recombination processes of core/shell nanocrystals. Numerical calculations are carried out using a two-band Kane Hamiltonian. Smooth interfaces…
We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs.…
Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be…
Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…
Tin monoxide is an interesting two-dimensional material because of the rare oxide semiconductor with bipolar conductivity. However, the lower room temperature mobility limits the applications of SnO in the future. Thus, we systematically…
We perform classical molecular dynamics to investigate the effects of mechanical strain on single-layer black phosphorus nanoresonators at different temperatures. We find that the resonant frequency is highly anisotropic in black phosphorus…
Phonon-assisted photoluminescence (PL) in molybdenum-based two-dimensional dichalcogenides is typically weak due to the dormant phonon coupling with optically inactive momentum-dark (intervalley) excitons, unlike in tungsten-based…
Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of two-dimensional semiconductors like molybdenum disulfide (MoS2). Although several theoretical works predicted that biaxial strain would…
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the…