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Related papers: Strain Effects on Auger-Meitner Recombination in S…

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The effect of strain on the resistivity and thermopower of ferromagnetic manganites has been examined based on the model that incorporates the electron-lattice interaction through the Jahn-Teller effect and an effective hopping determined…

Strongly Correlated Electrons · Physics 2009-11-07 S. Basak , I. Chaudhuri , S. K. Ghatak

We report a theoretical investigation of the ultrafast dynamics of electrons and phonons in strained monolayer WS$_2$ following photoexcitation. We show that strain substantially modifies the phase space for electron-phonon scattering,…

Mesoscale and Nanoscale Physics · Physics 2025-03-06 Yiming Pan , Fabio Caruso

Poly(ethylene terephthalate) (PET) films are widely used in flexible electronics and optoelectronics, where their mechanical durability and optical performance under strain are essential for device reliability. This study investigates the…

Applied Physics · Physics 2025-02-17 Mahya Ghorab , Ayush K. Ranga , Patrice Donfack , Arnulf Materny , Veit Wagner , Mojtaba Joodaki

Aiming at increasing the ferroelectric polarization in AFM-E ortho-\hmo, we investigate the in-plane strain effects on both the magnetic configuration and the polarization by means of density functional theory calculations and model…

We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function…

We investigate strain-induced contributions to the transient polar magneto-optical Kerr effect response in laser-excited terfenol. The tr-MOKE signals obtained from TbFe$_{2}$ films with and without glass capping exhibit distinct signatures…

Materials Science · Physics 2025-08-12 C. Walz , F. -C. Weber , S. -P. Zeuschner , K. Dumesnil , A. von Reppert , M. Bargheer

In two-dimensional nearly commensurate heterostructures, strain plays a critical role in shaping electronic behavior. While previous studies have focused on random strain introduced during fabrication, achieving controlled structural design…

A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an…

Mesoscale and Nanoscale Physics · Physics 2019-02-05 H. Li , L. Martinelli , F. Cadiz , A. Bendounan , S. Arscott , F. Sirotti , A. C. H. Rowe

The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the…

Complex oxide thin films and heterostructures offer a wide range of properties originating from the intrinsic coupling between lattice strain and magnetic/electronic ordering. This article reviews experimental, phenomenological, and…

Strongly Correlated Electrons · Physics 2023-10-20 Surendra Singh

Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman…

Mesoscale and Nanoscale Physics · Physics 2012-01-25 Rajesh Kumar , Vivek Kumar , A. K. Shukla

Tuning physical properties of transition metal dichalcogenide (TMD) monolayers by strain engineering have most widely studied, and recently Janus TMD monolayer MoSSe has been synthesized. In this work, we systematically study biaxial strain…

Materials Science · Physics 2018-08-01 San-Dong Guo

Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an…

Mesoscale and Nanoscale Physics · Physics 2020-04-22 Pia Lochner , Annika Kurzmann , Jens Kerski , Philipp Stegmann , Jürgen König , Andreas D. Wieck , Arne Ludwig , Axel Lorke , Martin Geller

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…

Mesoscale and Nanoscale Physics · Physics 2015-10-01 G. Plechinger , A. Castellanos-Gomez , M. Buscema , H. S. J. van der Zant , G. A. Steele , A. Kuc , T. Heine , C. Schüller , T. Korn

Radiative recombination of excitons dressed by the interactions with free charge carriers often occurs under simultaneous excitation of either electrons or holes to unbound states. This phenomenon, known as the electron recoil effect,…

We use density functional plus $U$ methods to study the effects of a tensile or compressive substrate strain on the charge-ordered insulating phase of LuNiO$_3$. The numerical results are analyzed in terms of a Landau energy function, with…

Strongly Correlated Electrons · Physics 2015-06-03 Zhuoran He , Andrew J. Millis

Based on first principles calculations and self-consistent solution of linearized Boltzmann-Peierls equation for phonon transport approach within a three-phonon scattering framework, we characterize lattice thermal conductivities k of…

Mesoscale and Nanoscale Physics · Physics 2016-03-23 Youdi Kuang , Lucas Lindsay , Sanqiang Shi , Guangping Zheng

Enhancing spin-to-charge (S$\rightarrow$C) conversion efficiency remains a key challenge in spintronic materials research. In this work we investigate the effect of substrate-induced strains onto the S$\rightarrow$C efficiency. On one hand,…

Strain can affect the morphology of a crystal surface, and cause modifications of its reconstruction even when weak, as in the case of mechanical bending. We carried out calculations of strain-dependent surface free energy and direct…

Materials Science · Physics 2007-05-23 U. Tartaglino , E. Tosatti , D. Passerone , F. Ercolessi

Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular…

Mesoscale and Nanoscale Physics · Physics 2017-03-14 M. Golam Rabbani , Sunil R. Patil , M. P. Anantram
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