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It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…
Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence…
A Fosters equivalent circuit for 2-D Planar Periodic Structures (PPSs) that exhibit an arbitrary geometry is presented for first time in this paper. The proposed 4-port network shows an invariant circuit topology to the PPS geometry and is…
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…
Two-dimensional transition metal dichalcogenides (TMDs) offer tunable optical and electronic properties, making them highly promising for next-generation optoelectronic devices. One effective approach to engineering these properties is…
Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to…
Controlling the spectral and polarization responses of two-dimensional (2D) crystals is vital for developing ultra-thin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect resulting high Rc at metal-MoS2 interface and the inherently…
Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate…
Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron…
To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of…
We conceptualized three-array scalable metasurfaces comprising only three thin strip grids and numerically demonstrated their characteristics in the mid-infrared spectral regime for switchable polarization manipulation and related…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
A polariton condensate transistor switch is realized through optical excitation of a microcavity ridge with two beams. The ballistically ejected polaritons from a condensate formed at the source are gated using the 20 times weaker second…