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Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an…
Inversion asymmetry in two-dimensional materials grants them fascinating properties such as spin-coupled valley degrees of freedom and piezoelectricity, but at the cost of inversion domain boundaries if the epitaxy of the grown 2D layer --…
Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic,…
The capability to switch electrically between superconducting and insulating states of matter represents a novel paradigm in the state-of-the-art engineering of correlated electronic systems. An exciting possibility is to turn on…
Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, steep sub-threshold swing and high carrier mobility offered…
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as…
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce…
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the…
When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moir\'e potential. As the angle between the layers changes, so do the electronic properties. As the…
Materials with axis-dependent conduction polarity are known as $p\times n$-type or goniopolar conductors that can be used for transverse thermoelectric devices, allowing the longitudinal thermal current to be converted into the transverse…
Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…