Related papers: Multi-type quantum well semiconductor membrane ext…
We demonstrate the first microchip semiconductor membrane external-cavity surface-emitting laser. This compact type of laser consists solely of a semiconductor gain region present as a micron-thin membrane, sandwiched between two…
A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and…
The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of…
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record…
A low-cost single frequency laser emitting in the mid-infrared spectral region and dissipating minimal electrical power is a key ingredient for the next generation of portable gas sensors for high-volume applications involving chemical…
Quantum cascade lasers (QCLs) are semiconductor-heterostructure devices known for their emission in the mid-infrared and THz spectral regions. Due to their operating regime, their intrinsic linewidth is significantly narrower compared to…
Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium…
A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common…
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
Tunable lasers are essential for optical communication, spectroscopy, and precision sensing, where flexible and fast control of the laser wavelength is needed. However, conventional tunable laser systems often rely on mechanical actuation,…
A microscopic study of mode-locked pulse generation is presented for vertical external-cavity surface-emitting lasers utilizing type-II quantum well configurations. The coupled Maxwell semiconductor Bloch equations are solved numerically…
We demonstrate a compact two-chip terahertz-emitting vertical-external-cavity surface-emitting laser (TECSEL) source, which provides 1-THz output based on intracavity frequency conversion of dual-wavelength emission in a periodically-poled…
We propose a novel method to control the frequency of semiconductor lasers. The new technique allows fabricating three-terminal lasers with fast frequency tuning and the possibility to implement intrinsically the linearization of laser…
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated…
We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…
In this work, we report the first account of monolithically-fabricated vertical cavity surface emitting lasers (VCSELs) of densely-packed, orientation-controlled, atomically flat colloidal quantum wells (CQWs) using a self-assembly method…
The development of the semiconductor quantum cascade laser (QCL) [1] has enabled bright coherent sources operating at frequencies between the optical (>100 THz) and electronic (<0.5 THz) ranges opening this frequency region for fundamental…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
RF injection locking and spectral broadening of a terahertz (THz) quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL) is demonstrated. An intra-cryostat VECSEL focusing cavity design is used to enable continuous-wave…