Design and modeling of a transistor vertical-cavity surface-emitting laser
Optics
2011-02-17 v1
Abstract
A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.
Keywords
Cite
@article{arxiv.1102.3196,
title = {Design and modeling of a transistor vertical-cavity surface-emitting laser},
author = {Wei Shi and Behnam Faraji and Mark Greenberg and Jesper Berggren and Yu Xiang and Mattias Hammar and Michel Lestrade and Zhi-Qiang Li and Z. M. Simon Li and Lukas Chrostowski},
journal= {arXiv preprint arXiv:1102.3196},
year = {2011}
}