Related papers: Scalable and Stable Ferroelectric Non-Volatile Mem…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
Polycrystalline samples of Er$_{1-x}$Ho$_x$NiSb ($x$ = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 1) were characterized by means of x-ray powder diffraction (XRD), scanning electron microscopy (SEM), and optical metallography. The results proved the…
As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films and discover a low-energy variant (hex-OR-2*2-P) with energy…
The ferroelectric nematic phase (NF) is a recently discovered phase of matter in which the orientational order of the conventional nematic liquid crystal state is augmented with polar order. Atomistic simulations suggest that the polar NF…
In this research, the ambient cured one part alkali activated material (AAM) containing graphene nanoplatelets (GNPs), fly ash, slag and silica fume has been investigated after high temperature exposure to 200 to 800oC. Their compressive…
We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…
We propose a thermoelectric cooling device based on an atomic-sized junction. Using first-principles approaches, we investigate the working conditions and the coefficient of performance (COP) of an atomic-scale electronic refrigerator where…
We have made a magnetic characterization of Nd0.5Sr0.5MnO3, Nd0.5Ca0.5MnO3, Sm0.5Ca0.5MnO3, Dy0.5Ca0.5MnO3 and Ho0.5Ca0.5MnO3 polycrystalline samples. Ferromagnetic, antiferromagnetic and charge ordering transitions in our samples agree…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Specific heat studies of the Sr$_{1-x}$Ba$_x$Mn$_{1-y}$Ti$_y$O$_3$ polycrystalline samples performed by the relaxation and DSC methods over the temperature range 2 - 450 K are reported. Anomalies accompanying the…
Ferromagnetic metallic oxides have potential applications in spincaloric devices which utilize the spin property of charge carriers for interconversion of heat and electricity through the spin Seebeck or the anomalous Nernst effect or both.…
A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically…
We have built a variable temperature scanning probe microscope (SPM) that covers 4.6 K - 180 K and up to 7 Tesla whose SPM head fits in a 52 mm bore magnet. It features a temperature-controlled sample stage thermally well isolated from the…
Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a…
Transformer decoding is constrained by both attention compute and KV-cache movement. This paper presents the Ferroelectric Charge-Domain Compute Cell (FCDC), a hafnium-zirconium-oxide (HZO) memcapacitor with an access device that stores…
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…