Related papers: Scalable and Stable Ferroelectric Non-Volatile Mem…
Nitrogen-vacancy (NV) center in diamond is an ideal candidate for quantum sensors because of its excellent optical and coherence property. However, previous studies are usually conducted at low or room temperature. The lack of full…
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…
Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…
High spatial resolution magnetic imaging has driven important developments in fields ranging from materials science to biology. However, to uncover finer details approaching the nanoscale with greater sensitivity requires the development of…
A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and…
We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited high current densities exceeding 2 kA/cm2 at 10 V, with a…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic…
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm)…
We report experimental demonstration of the feasibility of reaching temperatures below 1 mK using cryogen-free technology. Our prototype system comprises an adiabatic nuclear demagnetisation stage, based on hyperfine-enhanced nuclear…
We report on microwave optomechanics measurements performed on a nuclear adiabatic demagnetization cryostat, whose temperature is determined by accurate thermometry from below 500$~\mu$K to about 1$~$Kelvin. We describe a method for…
The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal data. Physical reservoir computing (PRC) offers an…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced…
Memristors have been intensively studied in recent years as promising building blocks for next-generation non-volatile memory, artificial neural networks and brain-inspired computing systems. Even though the environment adaptability of…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
In the emergent field of quantum technology, the ability to manage heat at the nanoscale and in cryogenic conditions is crucial for enhancing device performance in terms of noise, coherence, and sensitivity. Here, we demonstrate the active…
Quantum technologies offer unprecedented capabilities in computation and secure information transfer. Their implementation requires qubits to operate at cryogenic temperatures (CT) while control and readout electronics typically still…