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Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be…
Hexagonal boron nitride (hBN) spin defects off er transformative potential for quantum sensing through atomic-scale proximity to target samples, yet their performance is fundamentally limited by rapid coherence loss. While magnetic noise…
Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals…
Hexagonal boron nitride (hBN) is a wide band gap, van der Waals material that is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects. Intrinsic and extrinsic point defects…
Solid-state quantum emitters constitute an essential building blocks of integrated quantum photonic circuits. Among potential emitter platforms, hexagonal boron nitride (hBN) hosts single-photon emitters in an atomically thin lattice…
Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities.…
Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN…
The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may…
Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have…
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on…
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black…
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to…
Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split…
Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal…
Bound states in the continuum (BICs) garnered significant for their potential to create new types of nanophotonic devices. Most prior demonstrations were based on arrays of dielectric resonators, which cannot be miniaturized beyond the…
Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes…
Bandgap engineering by substituting C with B and N atoms in graphene has been shown to be a promising way to improve semiconducting properties of graphene. Such hybridized monolayers consisting of hexagonal BN phases in graphene (h-BNC)…
Hexagonal boron nitride is an emerging two-dimensional material with far-reaching applications in fields like nanophotonics or nanomechanics. Its layered architecture plays a key role for new materials such as Van der Waals…
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by…
In 2015, a new two dimensional (2D) carbon allotrope, called phagraphene, was theoretically proposed. Based on this structure, we propose here a new boron nitride structure called phaBN. It is composed by three types of rings: pentagons,…