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Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was…

Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic…

Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant…

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is…

Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…

Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible…

Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer…

Condensed Matter · Physics 2015-06-24 T. Schenkel , J. P. Holder , J. W. McDonald , J. Meijer , A. Persaud , D. H. Schneider

Natural silicon consists of three stable isotopes with atomic mass 28 (92.21%), 29 (4.70%) and 30 (3.09%). To present day, isotopic enrichment of Si was used in electronics for two goals: (i) fabrication of substrates with high level of…

Materials Science · Physics 2007-05-23 Issai Shlimak

The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment,…

Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from…

Quantum Physics · Physics 2022-06-14 Wayne M. Witzel , Jesse J. Lutz , Dwight R. Luhman

Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…

The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…

The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…

Mesoscale and Nanoscale Physics · Physics 2019-07-03 A. J. Sigillito , J. C. Loy , D. M. Zajac , M. J. Gullans , L. F. Edge , J. R. Petta

Cold atom ion sources have been developed and commercialized as alternative sources for focused ion beams (FIB). So far, applications and related research have not been widely reported. In this paper, a prototype rubidium FIB is used to…

Applied Physics · Physics 2023-07-05 S. Xu , Y. Li , M. A. Verheijen , E. R. Kieft , E. J. D. Vredenbregt

The focused helium ion beam microscope is a versatile imaging and nanofabrication instrument enabling direct-write lithography with sub-10-nm resolution. Subsurface damage and swelling of substrates due to helium ion implantation is…

Applied Physics · Physics 2024-10-08 Sherry Mo , Dana O. Byrne , Frances I. Allen

Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with…

Materials Science · Physics 2015-07-08 F. Fuchs , B. Stender , M. Trupke , J. Pflaum , V. Dyakonov , G. V. Astakhov

The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose…

Materials Science · Physics 2007-05-23 Y. S. Katharria , V. BAranwal , D. C. Agarwal , R. Krishna , P. Kumar , F. Singh , D. Kanjilal
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