Related papers: Non-Abelian Fibonacci quantum Hall states in 4-lay…
The electron-electron interaction in the Landau levels of bilayer graphene is markedly different from that of conventional semiconductors such as GaAs. We show that in the zeroth Landau level of bilayer graphene, in the orbital which is…
We analyze the phase diagram of the zeroth Landau level of bilayer graphene, taking into account the realistic effects of screening of the Coulomb interaction and the strong mixing between two degenerate sublevels. We identify robust…
Bilayer graphene in a magnetic field supports eight zero-energy Landau levels, which, as a tunable band gap develops, split into two nearly-degenerate quartets separated by the band gap. A close look is made into the properties of such an…
Magnetic fields quench the kinetic energy of two dimensional electrons, confining them to highly degenerate Landau levels. In the absence of disorder, the ground state at partial Landau level filling is determined only by Coulomb…
We construct an effective Hamiltonian for electrons in the fractional quantum Hall regime for GaAs and graphene that takes into account Landau level mixing (for both GaAs and graphene) and subband mixing (for GaAs, due to the nonzero width…
Recent theoretical insights into the possibility of non-Abelian phases in $\nu=2/3$ fractional quantum Hall states revived the interest in the numerical phase diagram of the problem. We investigate the effect of various kinds of two-body…
In a Bernal-stacked graphene bilayer, an electronic state in Landau level $% N=0$ is described by its guiding-center index $X$ (in the Landau gauge) and by its valley, spin, and orbital indices $\xi =\pm K,\sigma =\pm 1,$ and $% n=0,1.$…
We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…
The electronic properties of graphene can be manipulated via mechanical deformations, which opens prospects for studying the Dirac fermions in new regimes and for new device applications. Certain natural configurations of strain generate…
Fractional quantum Hall states have been observed at filling factor $\nu=3/4$ in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized…
By taking into account the charge and spin orderings and the exchange interactions between all the Landau levels, we investigate the integer quantum Hall effect of electrons in graphene using the mean-field theory. At the fillings $\nu =…
We study many-body ground states for the partial integer fillings of the $N=1$ Landau level in graphene, by constructing a model that accounts for the lattice scale corrections to the Coulomb interactions. Interestingly, in contrast to the…
We consider the fractional quantum Hall effect (FQHE) at the filling factor $8/17$, where signatures of incompressibility have been observed in the zeroth Landau level of bilayer graphene. We propose an Abelian state described by the…
We report results of exact diagonalization studies of the spin- and valley-polarized fractional quantum Hall effect in the $N=0$ and 1 Landau levels in graphene. We use an effective model that incorporates Landau level mixing to…
In a magnetic field graphene trilayers support a special multiplet of 12 zero(-energy)-mode Landau levels with a threefold degeneracy in Landau orbitals. A close look is made into such zero-mode levels in ABA-stacked trilayers, with the…
The fractional quantum Hall (FQH) effect is a macroscopic manifestation of strong electron-electron interactions. Even denominator FQH states (FQHSs) at half-filling are particularly interesting as they are predicted to host non-Abelian…
The current proposals for producing non-Abelian anyons and Majorana particles, which are neither fermions nor bosons, are primarily based on the realization of topological superconductivity in two dimensions. We show theoretically that the…
The even denominator fractional quantum Hall effect has been experimentally observed in graphene in the fourth Landau level ($n = 3$). This paper is motivated by recent studies regarding the possibility of pairing and the nature of the…
Incompressible even denominator fractional quantum Hall states at fillings $\nu = \pm \frac{1}{2}$ and $\nu = \pm \frac{1}{4}$ have been recently observed in monolayer graphene. We use a Chern-Simons description of multi-component…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…