English

Non-Abelian fractional quantum Hall states at filling factor 3/4

Strongly Correlated Electrons 2026-02-24 v2 Mesoscale and Nanoscale Physics

Abstract

Fractional quantum Hall states have been observed at filling factor ν=3/4\nu=3/4 in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized at ν=3/4\nu=3/4, which exhibit 1212 fold ground state degeneracy on the torus. The properties of ν=3/4\nu=3/4 states can be analyzed using two complementary approaches. In the first one, they are treated as particle-hole conjugate of ν=1/4\nu=1/4 Moore-Read types states. In the second one, they are mapped to composite fermions with reverse flux attachment at effective filling factor 3/23/2, whose integral part realizes an integer quantum Hall state and the fractional part realizes ν=1/2\nu=1/2 Moore-Read type states. For bilayer graphene with appropriate Landau level mixing, numerical calculations found 1212 quasi-degenerate ground states on the torus at ν=3/4\nu=3/4. Chiral graviton spectral functions of these states have one low energy peak with negative chirality and one high energy peak with positive chirality. This points to a specific member of the Moore-Read type states and agrees with the deduction based on daughter states.

Keywords

Cite

@article{arxiv.2408.16275,
  title  = {Non-Abelian fractional quantum Hall states at filling factor 3/4},
  author = {Kai-Wen Huang and Ying-Hai Wu},
  journal= {arXiv preprint arXiv:2408.16275},
  year   = {2026}
}

Comments

6 pages, 2 figures; in press