Non-Abelian fractional quantum Hall states at filling factor 3/4
Abstract
Fractional quantum Hall states have been observed at filling factor in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized at , which exhibit fold ground state degeneracy on the torus. The properties of states can be analyzed using two complementary approaches. In the first one, they are treated as particle-hole conjugate of Moore-Read types states. In the second one, they are mapped to composite fermions with reverse flux attachment at effective filling factor , whose integral part realizes an integer quantum Hall state and the fractional part realizes Moore-Read type states. For bilayer graphene with appropriate Landau level mixing, numerical calculations found quasi-degenerate ground states on the torus at . Chiral graviton spectral functions of these states have one low energy peak with negative chirality and one high energy peak with positive chirality. This points to a specific member of the Moore-Read type states and agrees with the deduction based on daughter states.
Keywords
Cite
@article{arxiv.2408.16275,
title = {Non-Abelian fractional quantum Hall states at filling factor 3/4},
author = {Kai-Wen Huang and Ying-Hai Wu},
journal= {arXiv preprint arXiv:2408.16275},
year = {2026}
}
Comments
6 pages, 2 figures; in press