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Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…

We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is facilitated by…

Silicon-based spin qubits offer a potential pathway toward realizing a scalable quantum computer owing to their compatibility with semiconductor manufacturing technologies. Recent experiments in this system have demonstrated crucial…

Impurities hosted in semiconducting solid matrices represent an extensively studied platform for quantum computing applications. In this scenario, the so-called flip-flop qubit emerges as a convenient choice for scalable implementations in…

Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its…

Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients…

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is…

Fluorescent spin qubits are central building blocks of quantum technologies. Placing these qubits at surfaces maximizes coupling to nearby spins and fields, enabling nanoscale sensing and facilitating integration with photonic and…

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…

In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus…

We analyze the implementation of high-fidelity, phonon-mediated gate operations and quantum simulation schemes for spin qubits associated with silicon vacancy centers in diamond. Specifically, we show how the application of continuous…

The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The…

We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic…

Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…

Multi-donor quantum dots have been at the forefront of recent progress in Si-based quantum computation. Among them, $2P:1P$ qubits have a built-in dipole moment, enabling all-electrical spin operation via hyperfine mediated electron dipole…

Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and…

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5…

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent…

Nuclear spins of dopant atoms in semiconductors are promising candidates as quantum bits, due to the long lifetime of their quantum states. Conventionally, coherent control of nuclear spins is done using ac magnetic fields. Using the…

We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor…