Related papers: Improved placement precision of implanted donor sp…
We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure…
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
We examine a 31P donor electron spin in a Si crystal to be used for the purposes of quantum computation. The interaction with an uncontrolled system of 29Si nuclear spins influences the electron spin dynamics appreciably. The hyperfine…
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon…
Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those…
We propose qubits based on shallow donor electron spins in germanium. Spin-orbit interaction for donor spins in germanium is in many orders of magnitude stronger than in silicon. In a uniform bulk material it leads to very short spin…
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for…
The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance…
We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of…
Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build…
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made…
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms within a radius of a few nanometers, they couple via the…
A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus…
A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates…
The nuclear spin of a phosphorus atom in silicon has been used as a quantum bit in various quantum-information experiments. It has been proposed that this nuclear-spin qubit can be efficiently controlled by an ac electric field, when…
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst…
Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control…
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows…
Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on…