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Low-dimensional materials have emerged as promising hosts for quantum emitters, whose emission typically arises from either strain-induced band bending or defect-induced two-level systems. Among these materials, transition metal…
Heavy metal-free quantum-dot light-emitting devices (QD-LEDs) have demonstrated remarkable brightness, saturated color, and high efficiencies across a broad spectral range. However, in contrast to organic LEDs (OLEDs), QD-LED operational…
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots,…
Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of the gain and the absorption spectra, for the analysis of the capture, escape,…
Epitaxial InAs/GaAs Quantum Dots (QDs) are widely used as highly efficient and pure sources of single photons and entangled photon-pairs, however reliable wafer-scale growth techniques have proved elusive. Growth of two-dimensional Quantum…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet…
Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices containing V-defects. Numerical modeling suggests this may be…
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We…
The linewidths and the energy shifts of the resonant states of the impurity electron in GaAs-based quantum wells (QWs) with infinite barriers are calculated. The two-dimensional Schr\"{o}dinger equation for the charge impurity in the QW is…
The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin…
We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates.…
The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers…
Continuous and concerted development of colloidal quantum-dot light-emitting diodes over the past two decades has established them as a bedrock technology for the next generation of displays. However, a fundamental issue that limits the…
Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One…
Membrane external-cavity surface-emitting lasers (MECSELs) are at the forefront of pushing the performance limits of vertically emitting semiconductor lasers. Their simple idea of using just a very thin (hundreds of nanometers to few…