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For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…
The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While…
High order modulation formats constitute the most prominent way for increasing spectral efficiency in transmission systems. Coherent transceivers that support such higher order formats require heavy digital signal processing (DSP), which…
Terahertz bands enable ultra-broadband wireless communications but require compact, low-cost, and efficient transceiver modules. Conventional implementations based on metallic waveguides or silicon lenses suffer from high loss, bulkiness,…
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between…
Multiphoton absorption of wide band-gap semiconductors has shown great prospects in many fundamental researches and practical applications. With intensity-modulated femtosecond lasers by acousto-optic frequency shifters, photocurrents and…
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn(1-x)MgxO core shell quantum…
Two-level systems (TLS) are known to be a dominant source of dissipation and decoherence in superconducting qubits. Superconducting resonators provide a convenient way to study TLS-induced loss due to easier design and fabrication in…
Microwave Kinetic Inductance Detector (MKID) arrays are currently being developed and deployed for astronomical applications in the visible and near infrared and for sub-millimetre astronomy. One of the main drawbacks of MKIDs is that large…
The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior.…
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…
Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no…
Bit-interleaved coded modulation with iterative decoding (BICM-ID) offers very good error performance over additive white Gaussian noise (AWGN) and fading channels if it uses a wisely designed signal mapping. Further, error performance of…
Quasar feedback is a key ingredient in shaping galaxy evolution. A rare population of extremely red quasars (ERQs) at $z=2-3$ are often associated with high-velocity [O III]$\lambda5008$ outflows and may represent sites of strong feedback.…
We present a detailed theoretical analysis of the electronic structure of $c$-plane InGaN/GaN quantum wells with indium contents varying between 10\% and 25\%. The electronic structure of the quantum wells is treated by means of an…
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…
The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM)…
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…
This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…