Related papers: Nonlinear Valley Hall Effect
While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without…
We study the momentum alignment of photoexcited carriers and the optical control of valley population in gapless and gapped two-dimensional Dirac materials. The trigonal warping effect leads to the spatial separation of charge carriers…
The third-order nonlinear Hall effect induced by Berry-connection polarizability tensor has been observed in Weyl semimetals T$_d$-MoTe$_2$ as well as T$_d$-TaIrTe$_4$. The experiments were performed on bulk samples, and the results were…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
We show that an electric field applied to a strained topological Dirac semimetal, such as Na3Bi and Cd3As2, induces a spin Hall current that is quadratic in the electric field. By regarding the strain as an effective "axial magnetic field"…
We generalize a semiclassical theory and use the argument of angular momentum conservation to examine the ballistic transport in lightly-doped Weyl semimetals, taking into account various phase-space Berry curvatures. We predict universal…
Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the layer physics in layertronics can be engineered into…
We present a theory of the photovoltaic valley-dependent Hall effect in a two-dimensional Dirac semiconductor subject to an intense near-resonant electromagnetic field. Our theory captures and elucidates the influence of both the…
We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal…
We study non-perturbatively the anomalous Hall current and its high harmonics generated in Weyl and Dirac semimetals by strong elliptically polarized laser fields, in the context of kinetic theory. We find a novel crossover between…
Nonlinear optical responses to external electromagnetic field, characterized by second and higher order susceptibilities, play crucial roles in nonlinear optical devices and novel optoelectronics. Herein we present a quantum nonlinear…
In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…
We report the synthesis and magneto-transport measurements on the single crystal of Dirac semimetal PdTe$_2$. The de Haas-van Alphen oscillations with multiple frequencies have been clearly observed, from which the small effective masses…
We investigate an interplay between quantum geometrical effects and surface plasmons through surface plasmonic structures, based on an electron hydrodynamic theory. First we demonstrate that the quantum nonlinear Hall effect can be…
The nonlinear Hall effect is a new type of Hall effect that has recently attracted significant attention. For the physical origin of the nonlinear Hall effect, while orbital magnetization has long been hypothesized to underpin the nonlinear…
The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…
Two-dimensional van der Waals materials offer a highly tunable platform for generating emergent quantum phenomena through symmetry breaking. Stacking-induced symmetry breaking at interfaces provides an effective method to modulate their…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…