Related papers: Magnonic Combinatorial Memory
A large body of knowledge about magnetism is attained from models of interacting spins, which usually reside on magnetic ions. Proposals beyond the ionic picture are uncommon and seldom verified by direct observations in conjunction with…
We have studied a non volatile memory effect in the mixed valent compound La$_{0.5}$Ca$_{0.5}$MnO$_{3}$ induced by magnetic field (H). In a previous work [R.S. Freitas et al., Phys. Rev. B 65 (2002) 104403], it has been shown that the…
This paper presents a new method for generating low-frequency electromagnetic waves for navigation and communication in challenging environments, such as underwater and underground. The main idea is to store magnetic energy in two different…
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…
In this paper, we propose a scheme of a long-lived broadband superefficient multiresonator quantum memory in which a common resonator is connected with an external waveguide and with a system of high-quality miniresonators containing…
Dynamical observables can often be described by time correlation functions (TCFs). However, efficiently calculating TCFs for complex quantum systems is a significant challenge, which generally requires solving the full dynamics of the…
Microwave storage and retrieval are essential capabilities for superconducting quantum circuits. Here, we demonstrate an on-chip multimode resonator in which strong parametric modulation induces a large and tunable normal-mode splitting…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
We analyze transport of magnetization in insulating systems described by a spin Hamiltonian. The magnetization current through a quasi one-dimensional magnetic wire of finite length suspended between two bulk magnets is determined by the…
There is a growing demand for highly-performant memories and memristive technologies for use in in-memory computing. Magnetic tunnel junctions (MTJs) have thus far addressed this need in the field of spintronics. Despite their low write…
Magnonics is an emerging field widely considered as a paradigm shift in information technology that uses spin waves for data storage, processing and transmission. However, the coherent control of spin waves in 2D magnets still remains a…
The conductance in an extended multiband Hubbard model describing linear arrays of up to ten quantum dots is calculated via a Lanczos technique. A pronounced suppression of certain resonant conductance peaks in an applied magnetic field due…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
The current efforts to fabricate non-volatile magnetic recording media with a high areal density is deteriorated by the increasing temporal instability of the stored information. If the stored energy per magnetic particle competes with the…
A combination of the memory function formalism and time-dependent density-functional theory is applied to transport in dilute magnetic semiconductors. The approach considers spin and charge disorder and electron-electron interaction on an…
Accelerator magnet test facilities frequently need to measure different magnets on differently equipped test stands and with different instrumentation. Designing a modular and highly reusable system that combines flexibility built-in at the…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
In the last decades, collinear magnetic insulating systems have emerged as promising energy-saving information carriers. Their elementary collective spin excitations, i.e., magnons, can propagate for long distances bypassing the Joule…
We show that the state of a flying qubit may be transferred to a chain of identical, (near) ferromagnetically polarised, but non-interacting, static spin-1/2 particles in a passive way. During this process the flying qubit is coherently…