Related papers: Spin-selective magneto-conductivity in WSe$_2$
The primary requirement for achieving spin-selective electron transfer in a nanojunction possessing a magnetic system with zero net magnetization is to break the symmetry between the up and down spin sub-Hamiltonians. Circumventing the…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
Recent transport experiments in spatially modulated quasi-1D structures created on top of LaAlO$_3$/SrTiO$_3$ interfaces have revealed some interesting features, including phenomena conspicuously absent without the modulation. In this work,…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…
We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…
We report a first principles theoretical investigation of quantum transport in monolayer WSe2 field effect transistor (FET). Due to a strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional (2D) lattice,…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
The magneto-optical longitudinal, transverse Hall and circularly-polarized response of silicene and other materials described by a Kane-Mele Hamiltonian are calculated. Particular attention is paid to the effects of an external electric…
Spin-orbit coupling has proven indispensable in realizing topological materials and more recently Ising pairing in two-dimensional superconductors. This pairing mechanism relies on inversion symmetry breaking and sustains anomalously large…
Spin-dependent electron transport in a periodically stubbed quantum wire in the presence of Rashba spin-orbit interaction (SOI) is studied via the nonequilibrium Green's function method combined with the Landauer-Buttiker formalism. The…
We theoretically investigate spin-resolved thermoelectric transport in a triangular ladder geometry hosting antiferromagnetic spin alignment, where lattice topology and magnetic ordering jointly enable highly efficient spin-selective energy…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
We investigate ballistic spin transport in a two dimensional electron gas system through magnetic barriers of various geometries using the transfer matrix method. While most of the previous studies have focused on the effect of magnetic…
Enhancement of the electron spin polarization in a correlated two-layer two-dimensional electron system at a total Landau level filling factor of one is reported. Using resistively detected nuclear magnetic resonance, we demonstrate that…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…