English
Related papers

Related papers: Electrical contact properties between Yb and few-l…

200 papers

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical…

Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2…

Materials Science · Physics 2023-10-16 S. Gupta , R. Ohshima , Y. Ando , T. Endo , Y. Miyata , M. Shiraishi

Crystalline materials with ultralow thermal conductivity are highly desirable for thermoelectric applications. Many known crystalline materials with low thermal conductivity, including PbTe and Bi2Te3, possess a special kind of chemical…

Materials Science · Physics 2018-09-24 Sheng-Ying Yue , Tashi Xu , Bolin Liao

Two-dimensional transition metal dichalcogenides (TMDs) exhibit an extensive variety of novel electronic properties, such as charge density wave quantum spin Hall phenomena, superconductivity, and Dirac and Weyl semi-metallic properties.…

Strongly Correlated Electrons · Physics 2023-09-15 S. Koley

Contact electrification, or tribocharging, is pertinent to a broad range of industrial and natural processes involving dielectric materials. However, the basic mechanism by which charge is transferred between insulators is still unclear.…

Applied Physics · Physics 2019-08-21 Isaac A. Harris , Melody X. Lim , Heinrich M. Jaeger

Current-voltage characteristics of Au~/~YBa$_2$Cu$_3$O$_{7-\delta}$ interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for…

Materials Science · Physics 2020-02-19 L. F. Lanosa , H. Huhtinen , P. Paturi , C. Acha

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC…

In order to study ultracold charge-transfer processes in hybrid atom-ion traps, we have mapped out the potential energy curves and molecular parameters for several low lying states of the Rb, Yb$^+$ system. We employ both a multi-reference…

Atomic Physics · Physics 2013-05-30 H. D. L. Lamb , J. F. McCann , B. M. McLaughlin , J. Goold , N. Wells , I. Lane

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron…

The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 A. W. Tsen , R. Hovden , D. Z. Wang , Y. D. Kim , J. Okamoto , K. A. Spoth , Y. Liu , W. J. Lu , Y. P. Sun , J. Hone , L. F. Kourkoutis , P. Kim , A. N. Pasupathy

Molybdenum ditelluride, MoTe2, is a versatile material where the topological phase can be readily tuned by manipulating the associated structural phase transition. The fine details of the band structure of MoTe2, key to understanding its…

Materials Science · Physics 2020-02-19 D. Santos-Cottin , E. Martino , F. Le Mardele , C. Witteveen , F. O. von Rohr , C. C. Homes , Z. Rukelj , Ana Akrap

The development of two-dimensional (2D) transition metal dichalcogenides (TMDs) based transistors has been constrained by high contact resistance and inadequate current delivery, primarily stemming from metal-induced gap states and Fermi…

Mesoscale and Nanoscale Physics · Physics 2025-02-21 Yun Li , Tinghe Yun , Bohan Wei , Haoran Mu , Luojun Du , Nan Cui , Guangyu Zhang , Shenghuang Lin

The electronic properties of single-layer antimony are studied by a combination of first-principles and tight-binding methods. The band structure obtained from relativistic density functional theory is used to derive an analytic…

Materials Science · Physics 2017-02-23 A. N. Rudenko , M. I. Katsnelson , R. Roldán

A novel high magnetic field (8 T) spectrometer for muon spin rotation has been used to measure the temperature dependence of the in-plane magnetic penetration depth in YBa2Cu3O6.95. At low H and low T, the penetration depth exhibits the…

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning…

Quantum information processing with neutral atoms relies on Rydberg excitation for entanglement generation. While the use of heavy divalent or open-shell elements, such as strontium or ytterbium, has benefits due to their optically active…

The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…

Strongly Correlated Electrons · Physics 2009-11-11 D. A. Knyazev , O. E. Omelyanovskii , A. S. Dormidontov , V. M. Pudalov

Metallic transition metal dichalcogenides like tantalum diselenide (TaSe$_{2}$) exhibit exciting behaviors at low temperatures, including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is…

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and…

We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the…

Mesoscale and Nanoscale Physics · Physics 2015-06-22 Y. F. Cao , K. M. Cai , L. J. Li , W. J. Lu , Y. P. Sun , K. Y. Wang