Related papers: A quantum sensing metrology for magnetic memories
Nuclear magnetic resonance offers an appealing prospect for implementation of quantum computers, because of the long coherence times associated with nuclear spins, and extensive laboratory experience in manipulating the spins with radio…
Nanomechanical spectroscopy (NMS) is a recently developed approach to determine optical absorption spectra of nanoscale materials via mechanical measurements. It is based on measuring changes in the resonance frequency of a membrane…
The parametric torque presents a promising recording mechanism for MRAM, complementing Spin Transfer Torque and Spin Orbit Torque, enabling magnetization reversal in a nanomagnet using a DC electrical current. Its resonance nature allows…
Nanoelectromechanical Systems (NEMS) have emerged as a promising technology for performing the mass spectrometry of large biomolecules and nanoparticles. As nanoscale objects land on NEMS sensor one by one, they induce resolvable shifts in…
Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments…
We investigate magnetization reversal processes of magnetic nanorings. Using a recently developed efficient cartesian coordinates fast multipole method, magnetization switching phase diagrams are constructed for such structures. We find…
DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention…
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…
Emerging resistive-crossbar memory (RCM) technology can be promising for computationally-expensive analog pattern-matching tasks. However, the use of CMOS analog-circuits with RCM would result in large power-consumption and poor…
Quantum random access memory (QRAM) promises simultaneous data queries at multiple memory locations, with data retrieved in coherent superpositions, essential for achieving quantum speedup in many quantum algorithms. We introduce a…
Quantum technologies exploit entanglement to enhance various tasks beyond their classical limits including computation, communication and measurements. Quantum metrology aims to increase the precision of a measured quantity that is…
Controllable atomic-scale quantum systems hold great potential as sensitive tools for nanoscale imaging and metrology. Possible applications range from nanoscale electric and magnetic field sensing to single photon microscopy, quantum…
Quantitative Magnetic Resonance Imaging (qMRI) provides researchers insight into pathological and physiological alterations of living tissue, with the help of which researchers hope to predict (local) therapeutic efficacy early and…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
We present experimental results on the measurement of fidelity decay under contrasting system dynamics using a nuclear magnetic resonance quantum information processor. The measurements were performed by implementing a scalable circuit in…
Non-volatile memory (NVM), also known as persistent memory, is an emerging paradigm for memory that preserves its contents even after power loss. NVM is widely expected to become ubiquitous, and hardware architectures are already providing…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
Nanometer-sized magnetic particles have generated continuous interest as the study of their properties has proved to be scientifically and technologically very challenging. In this article we reviewed the most important theories and…