Related papers: Spatially resolved dielectric loss at the Si/SiO$_…
Randomly distributed traps at the MoS$_2$/SiO$_2$ interface result in non-ideal transport behavior, including hysteresis in MoS$_2$/SiO$_2$ field effect transistors (FETs). Thus traps are mostly detrimental to the FET performance but they…
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors.…
Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…
Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance…
We report on the detection of diffraction gratings buried below a stack of tens of 18 nm thick $\mathrm{SiO_2}$ and $\mathrm{Si_3N_4}$ layers and an optically opaque metal layer, using laser-induced, extremely-high frequency ultrasound. In…
The nature and concentration of defects near niobium-silicon interfaces prepared with different silicon surface treatments were characterized using current-voltage (I-V), deep level transient spectroscopy (DLTS), and secondary ion mass…
Electronic level alignment at the interface between an adsorbed molecular layer and a semiconducting substrate determines the activity and efficiency of many photocatalytic materials. We perform $G_0W_0$ calculations to determine the…
In complex transition metal oxide heterostructures of physically dissimilar perovskite compounds, interface phenomena can lead to novel physical properties not observed in either of their constituents. This remarkable feature opens new…
We present a systematic analysis of the internal losses of superconducting coplanar waveguide microwave resonators based on niobium thin films on silicon substrates. In particular, we investigate losses introduced by Nb/Al interfaces in the…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
The two-dimensional electron gas (2DEG) found in KTaO3-based interfaces has garnered attention due to its remarkable electronic properties. In this study, we investigated the conducting system embedded at the Si3N4/Al//KTO(110)…
Damping rates of multipolar, localized surface plasmons (SP) of gold and silver nanospheres of radii up to $1000nm$ were found with the tools of classical electrodynamics. The significant increase in damping rates followed by noteworthy…
The subspace identification method (SIM) has been extensively employed in the identification of discrete-time multiple-input multiple-output (MIMO) linear time-invariant (LTI) systems. This paper focuses on the analysis of perturbation…
We investigated the local density of states (LDOS) of a normal metal (N) in good electrical contact with a superconductor (S) as a function of the distance $x$ to the NS interface. The sample consists of a pattern of alternate stripes of Au…
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has…
Silicon nitride (SiN) micro- and nanomechanical resonators have attracted a lot of attention in various research fields due to their exceptionally high quality factors ($Q$s). Despite their popularity, the origin of the limiting loss…
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si…
A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…
The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D atomistic-level mapping of the roughness and uniformity of…
Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using…