Related papers: Micromechanical field-effect transistor terahertz …
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
There are few demonstrated examples of phase transitions that may be driven directly by terahertz-frequency electric fields, and those that are known require field strengths exceeding 1 MVcm$^{-1}$. Here we report a room-temperature phase…
We report on the new optical gating technique used for the direct photoconductive detection of short pulses of terahertz radiation with the resolution up to 250 femtoseconds. The femtosecond optical laser pulse time delayed with respect to…
The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity…
Graphene Josephson junctions (JJ) provide a promising platform for ultra-broadband quantum sensing of light owing to graphene's frequency-independent absorption, vanishing electronic heat capacity, and weak electron-phonon coupling, which…
Local phase control of electromagnetic wave, the basis of a diverse set of applications such as hologram imaging, polarization and wave-front manipulation, is of fundamental importance in photonic research. However, the bulky, passive phase…
Interferometers are essential tools to measure and shape optical fields, and are widely used in optical metrology, sensing, laser physics, and quantum mechanics. They superimpose waves with a mutual phase delay, resulting in a change in…
Interferometers are some of the most important optical devices, yet their spin wave based analogues so far received limited attention. In this work we demonstrate how one can design Mach-Zehnder Interferometer (MZI) operating on spin waves,…
Resonant tunneling diodes (RTDs) support room-temperature terahertz (THz) oscillation and simultaneous THz-band detection, enabling compact monostatic THz sensors for practical and cost-effective sensing applications. In this paper, we…
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
The induced terahertz response of semiconductor systems is investigated with a microscopic theory. In agreement with recent terahertz experiments, the developed theory fully explains the ultrafast build up of the plasmon resonance and the…
The attoclock is a powerful tool for probing ultrafast electron dynamics with attosecond precision.Here, we demonstrate an all-optical terahertz (THz) attoclock that reconstructs photoionization dynamics by detecting the THz radiation…
Control of physical property in terms of external fields is essential for contemporary technologies. The conductance can be controlled by a gate electric field in a field effect transistor, which is a main component of the integrated…
We employ ultrabroadband terahertz (THz) spectroscopy to expose the high-frequency transport properties of Dirac fermions in monolayer graphene. By controlling the carrier concentration via tunable electrical gating, both equilibrium and…
We study gated field effect transistors (FETs) with an eccentric Corbino-disk geometry, such that the drain spans its circumference while the off-center inner ring acts as a source. An AC THz potential difference is applied between source…
We consider a far infrared (terahertz), room-temperature detector based on a microcantilever sensor of the radiation pressure. This system has a significantly higher sensitivity than existing uncooled detectors in the far infrared…
We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…