Related papers: Micromechanical field-effect transistor terahertz …

We have evaluated the imaging capabilities of the Timepix4 hybrid silicon pixel detector for 100 keV and 200 keV electrons in a Transmission Electron Microscope (TEM). Using the knife-edge method, we have measured the Modulation Transfer…

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors…

Terahertz (THz) near-field imaging is a flourishing discipline [1], with applications from fundamental studies of beam propagation [2,3] to the characterisation of metameterials [4,5] and waveguides [6,7]. Beating the diffraction limit…

Uniaxial spintronic heterostructures constitute compact THz emitters under femtosecond optical excitation, with emission amplitude and polarization governed by the applied magnetic field is presented. We demonstrate here efficient…

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases…

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying…

Magnetic force microscopy (MFM) allows detection of stray magnetic fields around magnetic materials and the two-dimensional visualization of these fields. This paper presents a theoretical analysis of the oscillations of an MFM tip above a…

Terahertz (THz) polarization detection provides critical insights into material properties but faces a fundamental constraint upon miniaturization: subwavelength metallic electrodes induce strong localization and distortion of the incident…

A concept of an electrically tunable resonance detector of THz-frequency signals based on antiferromagnetic/heavy metal (AFM/HM) hetero-structure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the…

We achieve high detectivity terahertz sensing using a silicon nitride nanomechanical resonator functionalized with a metasurface absorber. High performances are achieved by striking a fine balance between the frequency stability of the…

We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier…

Microfluidic fuel cells (MFCs) are microfluidic electrochemical conversion devices that are used to power small pieces of electrical equipment. Their performance relies on the improvement of the mass transfer of the reactants at the…

We study dephasing in an electronic Mach-Zehnder (MZ) interferometer based on quantum Hall (QH) edge states by a micromiter-sized Ohmic contact embedded in one of its arms. We find that at the filling factor $\nu=1$, as well as in the case…

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…

Double-slit electron interferometers, fabricated in high mobility two-dimensional electron gas (2DEG), proved to be very powerful tools in studying coherent wave-like phenomena in mesoscopic systems. However, they suffer from small fringe…

Graphene plasmons hold immense potential for terahertz (THz) detector application due to their fascinating interactions between radiation and matter. However, it has remained challenging to excite and manipulate graphene plasmons within…

Terahertz lies at the juncture between RF and optical electromagnetism, serving as a transition from mm-Wave to infrared photonics. Terahertz technology has been used for industrial quality control, security imaging, and high-speed…

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation)…

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P…