Related papers: Dynamic Versus Static Oxidation of Nb/Al-AlOx/Nb T…
The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices.…
Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard…
Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and…
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath…
We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures…
Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…
We show that less than 10% of the barrier area dominates the electron tunneling in state-of-art Al/AlOx/Al Josephson junctions. They have been studied by transmission electron microscopy, specifically using atomic resolution annular dark…
High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated…
$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on…
We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high $I_cR_n$-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional…
We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of…
We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al…
We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the…
The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest…
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel…
Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic…
The effect of dc electrical stress and breakdown on Josephson and quasiparticle tunneling in Nb/Al/AlOx/Nb junctions with ultrathin AlOx barriers typical for applications in superconductor digital electronics has been investigated. The…
Approaches to developing large-scale superconducting quantum processors must cope with the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices. State-of-the-art superconducting qubits employ aluminum oxide…