Related papers: Tunneling valley Hall effect driven by tilted Dira…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
The interplay of Ising spin-orbit coupling and non-trivial band topology in transition metal dichalcogenides (TMDs) produces anomalous transport and optical properties that are very different from a regular 2D electron gas. The…
Valley degrees of freedom are a promising resource for solid-state quantum information. However, traditional architectures rely on engineered valley energy splitting in semiconductors to utilize the valley degree of freedom as an…
Two-dimensional transition metal dichalcogenides lack inversion symmetry and have broken time-reversal symmetry due to the honeycomb structure and intrinsic ferromagnetism, which leads to their valley polarization. Here, we explored the…
We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an…
A valley filter capable of generating a valley-polarized current is a crucial element in valleytronics, yet its implementation remains challenging. Here, we propose a valley filter made of a graphene bilayer which exhibits a 1D moir\'{e}…
The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional…
ZrTe$_5$ has been of recent interest as a potential Dirac/Weyl semimetal material. Here, we report the results of experiments performed via in-situ 3D double-axis rotation to extract the full $4\pi$ solid angular dependence of the transport…
Orbitronics, which leverages the angular momentum of atomic orbitals for information transmission, provides a novel strategy to overcome the limitations of electronic devices. Unlike electron spin, orbital angular momentum (OAM) is strongly…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
The topological Hall effect (THE) originates from the real-space Berry phase that an electron gains when its spin follows the spatially varying non-trivial magnetization textures, such as skyrmions. Such topologically protected…
While Floquet engineering offers a powerful paradigm for manipulating topological phases, particularly Floquet Weyl semimetals, establishing an experimentally feasible strategy for tracking the dynamic evolution of such states remains a…
Magnetic topology and its associated emergent phenomena are central to realizing intriguing quantum states and spintronics functionalities. Designing spin textures to achieve strong and distinct electrical responses remains a significant…
We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the…
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…
We investigate magnetoresistivity and the Hall effect in a 6.3 nm gapless HgTe quantum well - a two-dimensional hybrid band system featuring coexisting linear (Dirac-like) and parabolic hole energy bands at low energies. Using a classical…
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in…
Parallel-field Hall effect is the appearance of a Hall voltage $V_{\rm H}$ that is transverse to the current $I$ when the magnetic field $B$ is applied parallel to $I$ (i.e. $B \parallel I \perp V_{\rm H}$). Such an effect is symmetry…