Related papers: Ultra8T: A Sub-Threshold 8T SRAM with Leakage Dete…

We evaluate the performances of a 100 um-thick silicon strip detector (SSD) with a 300 MeV proton beam and a 90Sr beta-ray source. Signals from the SSD have been read out using a VLSI chip. Common-mode noise, signal separation efficiency…

Memory management is necessary with the increasing number of multi-connected AI devices and data bandwidth issues. For this purpose, high-speed multi-port memory is used. The traditional multi-port memory solutions are hard-bounded to a…

Electrical static random memory (E-SRAM) is the current standard for internal static memory in Field Programmable Gate Array (FPGA). Despite the dramatic improvement in E-SRAM technology over the past decade, the goal of ultra-fast,…

Spin-Torque-Transfer RAM (STTRAM) is a promising technology however process variation poses serious challenge to sensing. To eliminate bit-to-bit process variation we propose a reference-less, destructive slope detection technique which…

Increasing demand for larger touch screen panels (TSPs) places more energy burden to mobile systems with conventional sensing methods. To mitigate this problem, taking advantage of the touch event sparsity, this paper proposes a novel TSP…

To provide data and code confidentiality and reduce the risk of information leak from memory or memory bus, computing systems are enhanced with encryption and decryption engine. Despite massive efforts in designing hardware enhancements for…

As minimum area SRAM bit-cells are obtained when using cell ratio and pull-up ratio of 1, we analyze the possibility of decreasing the cell ratio from the conventional values comprised between 1.5-2.5 to 1. The impact of this option on…

Pre-silicon side-channel leakage assessment is a useful tool to identify hardware vulnerabilities at design time, but it requires many high-resolution power traces and increases the power simulation cost of the design. By downsampling and…

Power-generating assets (e.g., jet engines, gas turbines) are often instrumented with tens to hundreds of sensors for monitoring physical and performance degradation. Anomaly detection algorithms highlight deviations from predetermined…

This paper presents 6T SRAM cell-based bit-parallel in-memory computing (IMC) architecture to support various computations with reconfigurable bit-precision. In the proposed technique, bit-line computation is performed with a short WL…

With a growing need to enable intelligence in embedded devices in the Internet of Things (IoT) era, secure hardware implementation of Deep Neural Networks (DNNs) has become imperative. We will focus on how to address adversarial robustness…

Silicon strip sensors have long been a reliable technology for particle detection. Here, we push the limits of silicon tracking detectors by targeting an unprecedentedly low material budget of 2%-7% $X_0$ in an 8-layer 4 m$^2$ detector…

As the Internet of Things (IoT) becomes an integral part of critical infrastructure and commercial services, runtime firmware attestation of constituent Micro-Controllers (MCUs) has become instrumental in maintaining security and trust.…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across…

The ever-increasing demand to extract temporal correlations across sequential data and perform context-based learning in this era of big data has led to the development of long short-term memory (LSTM) networks. Furthermore, there is an…

Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…

Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…

Accurate prediction of chip performance is critical for ensuring energy efficiency and reliability in semiconductor manufacturing. However, developing minimum operating voltage ($V_{min}$) prediction models at advanced technology nodes is…