Related papers: Characterizing and correcting electron and hole tr…
Charge trapping in germanium detectors will inevitably impact their excellent spectral performance. Disordered regions in the germanium crystal structure, either created in the material during processing or induced by radiation exposure,…
We present an investigation into the effects of high-energy proton damage on charge trapping in germanium cross-strip detectors, with the goal of accomplishing three important measurements. First, we calibrated and characterized the…
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping…
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson…
P-type point contact (PPC) high-purity germanium detectors are an important technology in astroparticle and nuclear physics due to their superb energy resolution, low noise, and pulse shape discrimination capabilities. Analysis of data from…
By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two…
In an ideal germanium detector, fully-absorbed monoenergetic gamma-rays will appear in the measured spectrum as a narrow peak, broadened into a Gaussian of width determined only by the statistical properties of charge cloud generation and…
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
The EDELWEISS-III direct dark matter search experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields ($<1\;\mathrm{V/cm}$), and as a consequence charge-carrier trapping…
We present a thorough analysis of the electronic detection of charged particles, confined in a Penning trap, via image charges induced in the trap electrodes. Trapping of charged particles in an electrode structure leads to frequency…
We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either…
Radiation damage to space-based Charge-Coupled Device (CCD) detectors creates defects which result in an increasing Charge Transfer Inefficiency (CTI) that causes spurious image trailing. Most of the trailing can be corrected during…
GEM are widely used as amplification stages in gaseous detectors exposed to high rates. The GEM consists of a polyimide foil which is coated by two thin copper layers. Charges collected into the holes or created during the amplification…
Events from alpha interactions on the surfaces of germanium detectors are a major contribution to the background in germanium-based searches for neutrinoless double-beta decay. Surface events are subject to charge trapping, affecting their…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
Internal charge amplification (ICA) in cryogenic high-purity germanium (HPGe) can lower detection thresholds by providing gain inside the detector crystal, but reliable operation requires a predictive estimate of the avalanche-onset…
Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a…
A comprehensive study, supported by systematic measurements and numerical computations, of the intrinsic limits of multi-GEM detectors when exposed to very high particle fluxes or operated at very large gains is presented. The observed…
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier…