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As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…
Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is…
The use of analog resistance states for storing weights in neuromorphic systems is impeded by fabrication imprecision and device stochasticity that limit the precision of synapse weights. This challenge can be resolved by emulating analog…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be…
Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the…
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error…
STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a powerful candidate for the low switching energy design of STT-MRAM. In the literature, the reading operation of STT-MRAM structured with IPMTJs have been not studied…
State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
Hardware neural networks that implement synaptic weights with embedded non-volatile memory, such as spin torque memory (ST-MRAM), are a major lead for low energy artificial intelligence. In this work, we propose an approximate storage…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…
We developed a 55 nm CMOS SRAM chip that scans all data every 125 ns and outputs timestamped soft error data via an SPI interface through a FIFO. The proposed system, consisting of the developed chip and particle detectors, enables…
Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…