STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a powerful candidate for the low switching energy design of STT-MRAM. In the literature, the reading operation of STT-MRAM structured with IPMTJs have been not studied until this time, in our knowledge. We investigated the reading operation of STT-MRAM structured with IPMTJs. To enumerate the read operations of the NVSenseAmp have successfully been performed a 2.5X reduction in average low power and a 13X increase in average high speed compared with the previous works.
@article{arxiv.1803.07037,
title = {High Speed and Low Power Sensing Schemes for STT-MRAM with IPMTJs},
author = {Mesut Atasoyu and Mustafa Altun and Serdar Ozoguz},
journal= {arXiv preprint arXiv:1803.07037},
year = {2018}
}