Related papers: A 2D quantum dot array in planar $^{28}$Si/SiGe
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
Superconducting spin qubits, also known as Andreev spin qubits, promise to combine the benefits of superconducting qubits and spin qubits defined in quantum dots. While most approaches to control these qubits rely on controlling the spin…
We suggest an architecture for quantum computing with spin-pair encoded qubits in silicon. Electron-nuclear spin-pairs are controlled by a dc magnetic field and electrode-switched on and off hyperfine interaction. This digital processing is…
The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field…
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…
We show theoretically that a strongly spin-polarized current can be generated in semiconductors by taking advantage of the ferromagnetic phase of a quantum dot array (QDA). A Hubbard model with coupling to leads is used to study the…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and…
We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as…
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is…
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one…
Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on…
The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such a qubit can be initialized, addressed, manipulated, read…
Gate-based quantum computation has been extensively investigated using quantum circuits based on qubits. In many cases, such qubits are actually made out of multilevel systems but with only two states being used for computational purpose.…
Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code.…
Inspired by the challenge of scaling up existing silicon quantum hardware, we investigate compilation strategies for sparsely-connected 2d qubit arrangements and propose a spin-qubit architecture with minimal compilation overhead. Our…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large…
Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…