Related papers: Scanning Gate Microscopy response for local tip po…
A systematic theory of the conductance measurements of non-invasive (weak probe) scanning gate microscopy is presented that provides an interpretation of what precisely is being measured. A scattering approach is used to derive explicit…
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the…
We analyze electrostatic interaction between a sharp conducting tip and a thin one-dimensional wire, e.g., a carbon nanotube, in a scanned gate microscopy (SGM) experiment. The problem is analytically tractable if the wire resides on a thin…
We present a scanning probe microscopy technique for spatially resolving transport in cold atomic gases, in close analogy with scanning gate microscopy in semiconductor physics. The conductance of a quantum point contact connected to two…
We theoretically study scanning gate microscopy (SGM) of electron and hole trajectories in a quantum point contact (QPC) embedded in a normal-superconductor (NS) junction. At zero voltage bias, the electrons and holes transported through…
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and…
We investigate the effect of a scanning gate tip in the nonlinear quantum transport properties of nanostructures. Generally, we predict that the symmetry of the current-voltage characteristic in reflection-symmetric samples is broken by a…
Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning…
The metallic tip of a scanning force microscope operated at 300 mK is used to locally induce a potential in a fully controllable double quantum dot defined via local anodic oxidation in a GaAs/AlGaAs heterostructure. Using scanning gate…
Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in…
An open resonator fabricated in a two-dimensional electron gas is used to explore the transition from strongly invasive scanning gate microscopy to the perturbative regime of weak tip-induced potentials. With the help of numerical…
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a…
We demonstrate a scanning gate grid measurement technique consisting in measuring the conductance of a quantum point contact (QPC) as a function of gate voltage at each tip position. Unlike conventional scanning gate experiments, it allows…
We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a…
A gated probe for scanning tunnelling microscopy (STM) has been developed. The probe extends normal STM operations by means of an additional electrode fabricated next to the tunnelling tip. The extra electrode does not make contact with the…
We show that scanning gate microscopy can be used for probing electron-electron interactions inside a nanostructure. We assume a simple model made of two non-interacting strips attached to an interacting nanosystem. In one of the strips,…
We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
The spin-polarized scanning tunnelling microscope (STM) can in principle resolve not only the electronic, but also the magnetic surface structure. We model recent STM measurements achieving magnetic resolution on the atomic scale by a…
Scanning gate microscopy images from measurements made in the vicinity of quantum point contacts were originally interpreted in terms of current flow. Some recent work has analytically connected the local density of states to conductance…