Related papers: A vertical gate-defined double quantum dot in a st…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create…
Quantum computers are the promising candidates for simulation of large quantum systems, which is a daunting task to perform in a classical computer. Here, we report the experimental realization of quantum tunneling of a single particle…
We study theoretically a double quantum dot hydrogen molecule in the GaAs conduction band as the basic elementary gate for a quantum computer with the electron spins in the dots serving as qubits. Such a two-dot system provides the…
Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…
Strained Ge ($\epsilon$-Ge) and strained Si ($\epsilon$-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, $\epsilon$-Ge and $\epsilon$-Si are…
The notion of a double well potential typically involves two regions of space separated by a repulsive potential barrier. The solution is a wave function that is suppressed in the barrier region and localized in the two surrounding regions.…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
Two strongly coupled quantum dots are theoretically and experimentally investigated. In the conductance measurements of a GaAs based low-dimensional system additional features to the Coulomb blockade have been detected at low temperatures.…
We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two…
In circuit-based quantum computing, the available gate set typically consists of single-qubit gates acting on each individual qubit and at least one entangling gate between pairs of qubits. In certain physical architectures, however, some…
Germanium-silicon-germanium (Ge/Si$_{x}$Ge$_{1-x}$) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where strain and quantum confinement strongly reshape the Ge valence…
We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
Free standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic…
At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…