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Non-reciprocal devices, which have different transmission coefficients for propagating waves in opposite directions, are crucial components in many low noise quantum measurements. In most schemes, magneto-optical effects provide the…
A new approach was developed for the design of front-end circuits for semiconductor radiation detectors. The readout scheme consists of a first stage made of only a few components located close to the detector, and of a remote second stage…
High efficiency and a compact footprint are desired properties for electro-optic modulators. In this paper, we propose, theoretically investigate and experimentally demonstrate a recirculating phase modulator, which increases the modulation…
The inability to efficiently tune the optical properties of waveguiding structures has been one of the major hurdles for the future scalability of integrated photonic systems. In silicon photonics, although dynamic tuning has been achieved…
A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) application. The LNA is composed of cascode input stage and common emitter (CE) output stage with…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
This paper presents a compact low-power, low-noise bioamplifier for multi-channel electrode arrays, aimed at recording action potentials. The design we put forth attains a notable decrease in both size and power consumption. This is…
Multiple-Amplifier Sensing (MAS) charge-coupled devices (CCDs) have recently been shown to be promising silicon detectors that meet noise sensitivity requirements for next generation Stage-5 spectroscopic surveys and potentially, future…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
The CLARO-CMOS is an application specific integrated circuit (ASIC) designed for fast photon counting with pixellated photodetectors such as multi-anode photomultiplier tubes (Ma-PMT), micro-channel plates (MCP), and silicon…
A decision feedback circuit with integrated offset compensation is presented in this paper. The circuit is built around the sense amplifier comparator. The feedback loop is closed around the first stage of the comparator resulting in…
Using Commercial Off-The-Shelf (COTS) Operational Amplifiers (OpAmps) and Complementary Metal-Oxide Semiconductor (CMOS) transistors, we present a demonstration of the Q-Pix front-end architecture, a novel readout solution for kiloton-scale…
This paper presents a low-area and low-power consumption CMOS differential current controlled oscillator (CCO) for neuromorphic applications. The oscillation frequency is improved over the conventional one by reducing the number of MOS…
Surface plasmon polariton amplification gives the possibility to overcome strong absorption in the metal and design truly nanoscale devices for on-chip photonic circuits. However, the process of stimulated emission in the gain medium is…
We designed 4x4 matrix TFTs arrays using current mirror amplifiers. Advantages of current mirror amplifiers are they need less requiring switches and the conversion time is short. The TFTs arrays 4x4 matrix using current mirror circuits…
Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…
We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…
Silicon-based waveguide plasmon detectors have a great research interest because of CMOS compatibility and integration capability with other plasmonic integrated circuits. In this paper, a balanced metal-semiconductor-metal (MSM) integrated…
Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes.…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…