Related papers: Orbital Hall effect in mesoscopic devices
The quantum Hall effect emerges when two-dimensional samples are subjected to strong magnetic fields at low temperatures: Topologically protected edge states cause a quantized Hall conductivity in multiples of $e^2/h$. Here we show that the…
We study theoretically the manifestation of the spin-Hall effect in a two-dimensional electronic system with Rashba spin-orbit coupling via dc-transport measurements in realistic mesoscopic H-shape structures. The Landauer-Buttiker…
The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit…
The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe…
We perform first principles numerical simulations to investigate resistance fluctuations in mesoscopic samples, near the transition between consecutive Quantum Hall plateaus. We use six-terminal geometry and sample sizes similar to those of…
Orbitronics has recently emerged as a very active research topic after several proposals aiming to exploit the orbital degree of freedom for charge-free electronics. In this communication, we investigate orbital transport in selected…
The intrinsic anomalous Hall effect is one of the most exciting manifestations of the geometric properties of the electronic wave-function. Here, we predict that the electronic wave-function's geometric nature also gives rise to a purely…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…
We study theoretically the spin-Hall effect as well as its reciprocal phenomenon (a transverse charge current driven by a spin-dependent chemical potential gradient) in electron and hole finite size mesoscopic systems. The…
Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current.…
The orbital Hall effect can generate currents of angular momentum more efficiently than the spin Hall effect in most metals. However, so far, it has only been understood as a steady state phenomenon. In this theoretical study, the orbital…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
We present an analysis of the orbital Hall effect (OHE) in a strip geometry and derive a formula for the orbital angular momentum (OAM) accumulation at the edges. The result is expressed in terms of band structure parameters and scattering…
The electronic circulator, and its close relative the gyrator, are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies.…
The orbital Hall effect provides an alternative means to the spin Hall effect to convert a charge current into a flow of angular momentum. Recently, compelling signatures of orbital Hall effects have been identified in 3d transition metals.…
We investigate spin-dependent transport in three--terminal mesoscopic cavities with spin--orbit coupling. Focusing on the inverse spin Hall effect, we show how injecting a pure spin current or a polarized current from one terminal generates…
We report a comprehensive experimental investigation of orbital-to-charge conversion in metallic and semiconductor materials, emphasizing the fundamental roles of the inverse orbital Hall effect (IOHE) and the inverse orbital Rashba effect.…
We report that due to the orbital Hall effect, orbital pumping effects can occur in materials with weak spin-orbit coupling. Moreover, there is a positive correlation between the strength of the orbital Hall effect and the size of…
We predict non-mesoscopic oscillations in the orbital magnetic moment of a thin semiconductor ring in the quantum Hall effect regime. These oscillations, which occur as a function of magnetic field because of a competition between…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…