Related papers: Powering Disturb-Free Reconfigurable Computing and…

Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…

Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…

In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature…

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even…

Field Programmable Gate Array (FPGA) is widely used in acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, conventional FPGA suffers from the tradeoff between chip area…

In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy…

Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing…

Fast, high fidelity control and readout of protected superconducting qubits are fundamentally challenging due to their inherent insensitivity. We propose a flux qubit variation which enjoys a tunable level of protection against relaxation…

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…

Camouflaging gate techniques are typically used in hardware security to prevent reverse engineering. Layout level camouflaging by adding dummy contacts ensures some level of protection against extracting the correct netlist. Threshold…

We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper consideration of charge trapping in the…

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for…

Hardware security has been a key concern in modern information technologies. Especially, as the number of Internet-of-Things (IoT) devices grows rapidly, to protect the device security with low-cost security primitives becomes essential,…

Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…

Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and…

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs…

We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…