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First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain…

Correlated transition metal oxides present exciting prospects as switches or memory and storage devices owing to the possibility to control electronic properties using various external stimuli. While their complex behaviour is known to stem…

Magnetic quantum oscillations (MQO) are traditionally applied to investigate the electronic structure of metals. In layered quasi-two-dimensional (Q2D) materials the MQO have several qualitative features giving additional useful…

Molecular communication via diffusion (MCvD) is a molecular communication method that utilizes the free diffusion of carrier molecules to transfer information at the nano-scale. Due to the random propagation of carrier molecules,…

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

In a multiprocessor system on chip (MPSoC) IC the processor is one of the highest heat dissipating devices. The temperature generated in an IC may vary with floor plan of the chip. This paper proposes an integration and thermal analysis…

In multilevel 3D integrated packaging, three major microstructures are viable due to the application of low volume of solders in different sizes, and/or processing conditions. Thermodynamics and kinetics of binary compounds in Cu/Sn/Cu low…

Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer…

Molecular communication is a new field of communication where molecules are used to transfer information. Among the proposed methods, molecular communication via diffusion (MCvD) is particularly effective. One of the main challenges in MCvD…

Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…

Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric 3D structures enable high trap depth, but…

To continue scaling beyond 2-D CMOS with 3-D integration, any new 3-D IC technology has to be comparable or better than 2-D CMOS in terms of scalability, enhanced functionality, density, power, performance, cost, and reliability.…

Layered magnetic transition-metal thiophosphate NiPS3 has unique two-dimensional (2D) magnetic properties and electronic behavior. The electronic band structure and corresponding magnetic state are expected to sensitive to the interlayer…

One of the key systems of a Muon Collider (MC) - seen as the most exciting option for the energy frontier machine in the post-LHC era - is its interaction region (IR). Designs of its optics, magnets and machine-detector interface are…

Deciphering the complicated interplay between collective and separate behaviors lies at the heart of first-order metal-insulator transition (MIT) in correlated electron systems, enabling the rational design of exotic electronic states and…

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of…

Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor (CMOS) processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in…