Related papers: Carbon cluster emitters in silicon carbide
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60Co- rays, 6 and 15 MeV electrons, 23 GeV protons and…
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full…
We present our density functional results of the geometry, electronic structure and dissociation energy of Ti_8C_12 dimer. We show that as opposed to the currently held view that Ti_8C_12 are highly stable monodispersed clusters, the…
A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this…
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical…
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or…
We consider collisional properties of weakly bound heteronuclear molecules (dimers) formed in a two-species mixture of atoms with a large mass difference. We focus on dimers containing light fermionic atoms as they manifest collisional…
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G…
Divacancy in its neutral charge state (V$_\text{C}$V$_\text{Si}^0$) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC four different V$_\text{C}$V$_\text{Si}$ configurations can…
Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quantum memories and local qubits registers. To fully leverage…
We report the detection of extended X-ray emission around several powerful 3CR quasars with redshifts out to 0.73. The ROSAT HRI images of the quasars have been corrected for spacecraft wobble and compared with an empirical point-spread…
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, precise identification and control of defects are key parameters to…
Single photon emitters in hexagonal boron nitride have been extensively studied recently. Although unambiguous identification of the emitters is still under intense research, carbon related defects are believed to play a vital role for the…
The cosmological origin of carbon, the fourth most abundant element in the Universe, is not well known and matter of heavy debate. We investigate the behavior of C/O to O/H in order to constrain the production mechanism of carbon. We…
The clustering of ultrahigh energy (>10^{20} eV) cosmic rays (UHECR) suggests that they might be emitted by compact sources. Statistical analysis (Dubovsky et al., 2000) estimated the source density. We extend their analysis to give also…
The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced…
The recent discovery of single-photon emitting defects hosted by the two-dimensional wide band gap semiconductor hexagonal boron nitride (hBN) has inspired a great number of experiments. Key characteristics of these quantum emitters are…
In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations,…
We detected carbon-chain molecules (CCMs) HC2n+1N (n=1-3) and C3S in Ku band as well as {high-energy excitation lines including C4H N=9-8, J=17/2-15/2, 19/2-17/2, and CH3CCH J=5-4, K=2 in the 3 mm band toward a starless core called the…