Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
Instrumentation and Detectors
2008-11-26 v1 High Energy Physics - Phenomenology
Abstract
In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in concrete environments at the next generations of high energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.
Keywords
Cite
@article{arxiv.physics/0611142,
title = {Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy},
author = {Ionel Lazanu and Sorina Lazanu},
journal= {arXiv preprint arXiv:physics/0611142},
year = {2008}
}
Comments
X-th Pisa Meeting on Advanced Detectors, May 21-27, 2006, La Biodola, Isola d'Elba (Italy), to be published in Nuclear Instruments and Methods in Physics Research A