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Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…

As the field of terahertz (THz) photonics advances, we present a monolithic gallium arsenide (GaAs) disk-shaped whispering gallery mode resonator that has potential as a component in THz nonlinear optics. GaAs is a material with significant…

Optical phased array (OPA) is a promising technology for compact, solid-state beam steering, with applications ranging from free-space optical communication to LiDAR. However, simultaneously achieving a large field of view (FOV), high…

Optics · Physics 2025-08-28 Yong Liu , Xiansong Meng , Hao Hu

Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 {\mu}m) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon…

Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530…

Low-noise lasers are of central importance in a wide variety of applications, including high spectral-efficiency coherent communication protocols, distributed fibre sensing, and long distance coherent LiDAR. In addition to low phase noise,…

We have designed and fabricated a shallow-etched grating on gallium arsenide nanomembranes for efficient chip-to-fiber coupling in quantum photonic integrated circuits. Experimental results show that the grating provides a fiber-coupling…

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…

We demonstrate phase lock of two >1.6W Titanium:sapphire lasers with a phase noise of -138dBc/Hz at 1MHz from the carrier, using an intra-cavity electro-optic phase modulator. The residual phase variance is 2.5 10^(-8)rad^2 integrated from…

Atomic Physics · Physics 2009-11-11 Holger Mueller , Sheng-wey Chiow , Quan Long , Steven Chu

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a…

Optics · Physics 2016-03-30 Luca Alloatti , Dinis Cheian , Rajeev Jagga Ram

We demonstrate a narrow-linewidth 780 nm laser system with up to 40 W power and a frequency modulation bandwidth of 230 MHz. Efficient overlap on nonlinear optical elements combines two pairs of phase-locked frequency components into a…

We present the design, fabrication and measured performance of a hierarchical sinuous-antenna phased array coupled to superconducting transition-edge-sensor (TES) bolometers for millimeter wavelengths. The architecture allows for…

Instrumentation and Methods for Astrophysics · Physics 2018-03-30 Ari Cukierman , Adrian T. Lee , Christopher Raum , Aritoki Suzuki , Benjamin Westbrook

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…

Optics · Physics 2016-08-08 Minhao Pu , Luisa Ottaviano , Elizaveta Semenova , Kresten Yvind

Optical modulators in the visible regime have far-reaching applications from biophotonics to quantum science. Implementations of such optical phase modulators on a complementary metal-oxide-semiconductor (CMOS) compatible platform have been…

Optics · Physics 2024-12-24 Neil MacFarlane , Firooz Aflatouni

Sub-threshold measurements of a photonic crystal (PC) microcavity laser operating at 1.3 microns show a linewidth of 0.10 nm, corresponding to a quality factor Q ~ 1.3x10^4. The PC microcavity mode is a donor-type mode in a graded square…

Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured.…

Materials Science · Physics 2009-11-13 Dance Spirkoska , Gerhard Abstreiter , Anna Fontcuberta I Morral

We demonstrate wavelength conversion of QAM signals including 32GBd QPSK and 10GBd 16QAM in a 50cm long high index doped glass spiral waveguide. The quality of the generated idlers over a 10nm bandwidth is sufficient to achieve a BER…

Compact, high-speed electro-optic phase modulators play a vital role in various large-scale applications including phased arrays, quantum and neural networks, and optical communication links. Conventional phase modulators suffer from a…

Widely-tunable and narrow-linewidth integrated lasers across all visible wavelengths are necessary to enable on-chip technologies such as quantum photonics, optical trapping, and biophotonics. However, such lasers have not been realized due…

In this paper, we demonstrate the integration of photonic devices on sapphire substrates using multi-layer depressed cladding waveguides at both 780 nm and 1550 nm. The devices are up to 10-cm long and written at depths down to 400 um. The…