High-speed modulator with interleaved junctions in zero-change CMOS photonics
Optics
2016-03-30 v2
Abstract
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.
Keywords
Cite
@article{arxiv.1601.05046,
title = {High-speed modulator with interleaved junctions in zero-change CMOS photonics},
author = {Luca Alloatti and Dinis Cheian and Rajeev Jagga Ram},
journal= {arXiv preprint arXiv:1601.05046},
year = {2016}
}
Comments
7 pages, 3 figures