Related papers: Laser Etch Enabled Active Embedded Microfluidic Co…
High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and…
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of…
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient…
Large-scale microfluidic microsystems with complex three-dimensional (3D) configurations are highly in demand by both fundamental research and industrial application, holding the potentials for fostering a wide range of innovative…
We demonstrate three-dimensional (3-D) quenched narrow-line laser cooling and trapping of 40Ca. With 5 ms of cooling time we can transfer 28 % of the atoms from a magneto-optic trap based on the strong 423 nm cooling line to a trap based on…
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are…
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270{\deg}C to 500{\deg}C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can…
In the emergent field of quantum technology, the ability to manage heat at the nanoscale and in cryogenic conditions is crucial for enhancing device performance in terms of noise, coherence, and sensitivity. Here, we demonstrate the active…
The micromixing process in microfluidic devices is of central importance in quite a few applications, with microfluidic studies on carbon capture and environmental monitoring being two examples. High surface area to volume ratio in…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
In this work, we report on the anisotropic etching characteristics of \b{eta}-Ga2O3 using triethylgallium (TEGa) performed in-situ within an MOCVD chamber. At sufficiently high substrate temperature, TEGa can act as a strong etchant for…
This paper reports an innovative process to fabricate $\beta$-Ga$_{2}$O$_{3}$ microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, under specific flux and fluence conditions, the…
The integration of photonic sensors into microfluidic devices provides opportunities for dynamic measurement of chemical and physical properties of fluids in very small volumes. We previously reported on the use of commercially available…
We present an experimental unit that realizes the ``multi-input, multi-output manifold'' thermal management technology proposed by Lamarre & Raymond (2023). The proposed setup can be used for experiments aimed at controlling spatiotemporal…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
Beta gallium oxide ($\beta$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present…
3D integrated circuit (3D-IC) technology gained acceptance due to the ability to achieve extremely high level of integration, where hundreds of ICs are stacked vertically. Such level of integration can result in local power dissipation of…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
The ability to induce regions of high and low ionic concentration adjacent to a permeselective membrane or nanochannel subject to an externally applied electric field (a phenomenon termed concentration-polarization) has been used for a…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…