Related papers: Switching of Perpendicular Magnetization by Spin-O…
Terahertz spintronics offers the prospect of devices which are both faster and more energy-efficient. A promising route to achieve this goal is to exploit current-induced spin-orbit torques. However, the high-frequency properties of these…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
In planar nano-magnetic devices magnetization direction is kept close to a given plane by the large easy-plane magnetic anisotropy, for example by the shape anisotropy in a thin film. In this case magnetization shows effectively in-plane…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with…
With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
It is demonstrated by means of the optimal control theory that the energy cost of the spin-orbit torque induced reversal of a nanomagnet with perpendicular anisotropy can be strongly reduced by proper shaping of both in-plane components of…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no…
The field of magnonics, which utilizes propagating spin waves for nano-scale transmission and processing of information, has been significantly advanced by the advent of the spin-orbit torque. The latter phenomenon can allow one to overcome…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
Phenomena originated from spin-orbit interaction, such as magnetic anisotropy (MA), Rashba-type interactions, or topological insulators, have drawn huge attention for its intriguing physics. In particular, the search for a novel…
We investigate the spin transport through strongly anisotropic noncollinear magnetic molecules and find that the noncollinear magnetization acts as a spin-switching device for the current. Moreover, spin currents are shown to offer a viable…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…